Resist ink and method of forming pattern using the same

ABSTRACT

Disclosed is a resist ink having superior acid-resistance and coupling property, the resist ink composed of 70% or less by weight of solvent, 10-15% by weight of base polymer, 10-15% by weight of tacktifier, 3% or less by weight of additive, and 1-10% by weight of coupling agent.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a resister ink and a pattern formationmethod, and particularly, to a register ink which has an enhancedacid-resistance due to an addition of a silane coupling agent and canprevent a defect caused by a liquation of remnants, and a patternformation method using the same.

2. Background of the Invention

A display device, especially, a flat panel display device, such as aliquid crystal display (LCD) device, is driven by employing an activedevice, e.g., a thin film transistor, at each pixel. This type ofdriving method of the display device is usually referred to as an activematrix driving method. The active matrix driving method is achieved suchthat the active device is disposed at each of pixels, arranged in amatrix configuration, thus to drive the corresponding pixel.

FIG. 1 shows an active matrix type LCD device. The LCD device with thestructure shown in FIG. 1 is a thin film transistor (TFT) LCD devicewhich employs TFTs as the active device. Referring to FIG. 1, the TFT islocated in each pixel of the LCD device having N×M pixels disposedvertically and horizontally. Each of the TFTs is formed at anintersection between a gate line 4 to which a scan signal is appliedfrom an external driving circuit and a data line 6 to which an imagesignal is applied therefrom. The TFT is provided with a gate electrode 3connected to the gate line 4, a semiconductor layer 8 formed on the gateelectrode 3 and activated responsive to a scan signal applied to thegate electrode 3, and a source/drain electrode 5 formed on thesemiconductor layer 3. A display region of a pixel 1 is provided with apixel electrode 10, which is connected to the source/drain electrode 5so that an image signal is applied thereto via the source/drainelectrode 5 in response to the activation of the semiconductor layer 8,thereby operating a liquid crystal (not shown).

FIG. 2 shows a structure of the TFT located in each pixel. As shown inFIG. 2, the TFT includes a substrate 20 formed of a transparentinsulating material such as glass, a gate electrode 3 formed on thesubstrate 20, a gate insulating layer 22 laminated over the entiresubstrate 20 located on the gate electrode 2, a semiconductor layer 6formed on the gate insulating layer 22 and activated upon a signal beingapplied to the gate electrode 3, a source/drain electrode 5 formed onthe semiconductor layer 6, and a passivation layer 25 formed on thesource/drain electrode 5 for protecting a device.

The source/drain electrode 5 of the TFT is electrically connected to thepixel electrode formed in each pixel. Accordingly, when a signal isapplied to the pixel electrode via the source/drain electrode 5, aliquid crystal is driven so as to display an image.

As stated above, the active matrix type display device, such as the LCDdevice, has pixels each having several tens of nanometers in size.Hence, the active device, such as the TFT, disposed within the pixel,should be minutely formed to be several nanometers in size. Inparticularly, the increase in demands on the high definition displaydevices such as high definition television(HDTV) requires that morepixels be disposed within the same scale screen, accordingly activedevice patterns (including gate line patterns and data line patterns)disposed within each pixel also have to be more minutely formed.

In the meantime, in order to fabricate the active device such as the TFTin the related art, patterns or lines of the active device have beenformed by a photolithography using an exposure system. However, therelated art pattern formation has to adopt a photolithography by anexposure process performed after laminating a photoresist on a layer tobe patterned. Here, since the exposure system has a limited exposurearea, the photolithography should be performed by splitting a screen inorder to fabricate a large display device. Therefore, upon thephotolithography process for the split areas, an accurate positionalignment of the exposed areas is difficult and also thephotolithography should be repeated plural times, resulting in loweringof productivity.

In order to obviate such problems, a printing method has been recentlyproposed in which a resist pattern is formed by printing a resist inkdirectly on an etching target layer, such as a metal, by use of a roll,and then the etching target layer is etched with an etching solutionunder a state of masking the lower etching target layer with the resistpattern.

The printing method is implemented such that a resist ink with a desireform (i.e., a form depending on a pattern shape) is formed on a printroll, which is then rolled on a substrate so as to transcribe the resistink thereon, thereby forming a resist pattern. However, the etching bythe related art printing method has the following problems.

Typically, a photoresist is photocrosslinked as light is irradiated witha photo initiator being added because patterns are formed by exposureprocess, while the printing method derives the crosslink by a backingprocess other than the photocrosslink. However, in the baking process,if part of components remains without being crosslinked after beingbaked, when an etching solution is added, remnants are liquated, therebycausing damage such as a generation of a pin hole in a resist link. Thedamage on the resist ink may cause a defect upon etching the etchingtarget layer. Further, the resist ink may be peeled away by the remnantsduring wet etching, thereby exposing a metal layer. Consequently, theetching solution even etches the exposed metal layer. As a result, awidth of a pattern may problematically be narrower than a preset widthor even a short-circuit may occur in the pattern.

SUMMARY OF THE INVENTION

Therefore, to obviate the above problems, an object of the presentinvention is to provide a resist link which has an enhancedacid-resistance due to addition of a silane coupling agent to the resistink and can prevent a defect due to a pin hole or the like.

Another object of the present invention is to provide a method forforming a pattern by use of the above fabricated resist ink.

To achieve the objects of the present invention, a resist ink may becomposed of 70% or less by weight of solvent, 10-15% by weight of basepolymer, 10-15% by weight of tackifier, 3% or less by weight ofadditive, and 1-10% by weight of coupling agent.

The solvent may be composed of a carrier solvent such as ethanol ormethanol and a printing solvent such as ethoxypropanol. The couplingagent may be one of methacryloxy propyltrimethoxy silane,N-(2-aminoethyl)-3-aminopropyltrimethoxy silane,γ-mercapto-propyltriethoxy silane,N-[2-vinylbenzylamino)ethyl]-3-aminopropyltriethoxy silane,3-methacryloxy propyltrimethoxy silane and 3-glycidoxy propyltrimethoxysilane, which is selectively used depending on a solvent.

In the present invention, an addition of a silane coupling agent to aresist ink leads to a formation of a crosslink and an improved couplingforce between the resist ink and an etching target layer, such as asubstrate or a metallic layer, which prevents a pin hole from beingformed due to a liquation of non-crosslinked components and enhances anacid-resistance of the resist link. Therefore, when forming a pattern byemploying the resist ink, a defective pattern due to the damage of theresist ink can be obviated.

The foregoing and other objects, features, aspects and advantages of thepresent invention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention andtogether with the description serve to explain the principles of theinvention.

In the drawings:

FIG. 1 is a planar view showing a structure of a typical LCD device;

FIG. 2 is a cross-sectional view showing the structure of the TFT ofFIG. 1;

FIGS. 3A to 3E are views showing a pattern formation method inaccordance with the present invention;

FIG. 4 is a view showing a reaction of a resist ink responsive to asilane coupling agent in accordance with the present invention; and

FIGS. 5A to 5H are views showing a method for forming an LCD device inaccordance with the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Description will now be given in detail of a resist ink and a patternformation method using the same in accordance with the presentinvention, with reference to the accompanying drawings.

FIGS. 3A to 3E are showing a pattern formation method for an LCD devicein accordance with the present invention. As shown in FIG. 3A, a blanket132 is formed on the surface of a cylindrical roll 131, and a resist inkfilm 133 is coated on the blanket 132 via a resist ink feeder 135.

Referring to FIG. 3B, a cliché 130 having a plurality of convex patterns130′ on the surface thereof is prepared. As the roll 131 coated with theresist ink film 133 is rolled on the surface of the cliché 130 in acontacted state, the resist ink contacted with the cliché 130 is removedso that a resist link pattern 133 a is formed on the blanket 132 whichis not contacted with the convex patterns 130′ of the cliché 130. Here,the cliché 130 having the convex patterns 130′ may be formed by theconventional photolithography. That is, a substrate formed of glass isprepared. A metallic layer is deposited on the entire substrate to bethen patterned, thereby forming metallic patterns. Afterwards, thesubstrate is etched by use of the metallic patterns as a mask, therebyforming the convex patterns 130′ on the metallic pattern-formed areas.Here, the metallic patterns may alternatively be developed.

As the roll 131 coated with the resist ink film 133 is rolled on thesurface of the thusly fabricated cliché 130, resist ink films 133′ onthe non-contacted portions with the convex patterns 130′ remain on thesurface of the cliché 132 as resist ink patterns 133 a.

Referring to FIG. 3C, an etching target layer 160 a is formed on asubstrate 150. The etching target layer 160 a may be a metal layer, asemiconductor layer or an insulating layer. For the metal layer, a metalmay be stacked on the substrate 150 by sputtering. For the semiconductorlayer, an amorphous semiconductor or crystalline semiconductor such asSi or the like may be stacked on the substrate 150 by plasma enhancedchemical vapor deposition (PECVD). Also, for the insulating layer, aninorganic material may be stacked on the substrate 150 by the CVD schemeor an organic material may be coated on the substrate 150 by a spincoating or the like.

When the roll 131 having the resist ink patterns 133 a remaining thereonis rolled in a contact state with the etching target layer 160 a on thesubstrate 150, the resist ink patterns 133 a remaining on the roll 131are transcribed on the surface of the etching target layer 160 a. If theresist ink patterns 133 a transcribed on the etching target layer 160 aare heated up at a temperature of about 150° C. for about 3 minutes soas to be baked, resist ink patterns 138 are formed on the etching targetlayer 160 a.

Afterwards, referring to FIG. 3D, an etching solution is applied on theetching target layer 160 a in a state of partially blocking the etchingtarget layer 160 a with the resist patterns 138 so as to etch theetching target layer 160 a, thereby forming patterns 160 beneath theresist ink patterns 138. Here, if the etching target layer 160 a is ametal layer, an acid etching solution such as HF may be applied to etchthe etching target layer 160 a. If the etching target layer 160 a is asemiconductor layer or an insulating layer, an etching gas may beapplied to etch the etching target layer 160 a. Afterwards, referring toFIG. 3E, the resist patterns 138 are developed and the patterns 160 areformed on the substrate 150 accordingly.

In the pattern formation method according to the present invention, aresist ink different from the conventional resist ink is employed so asto prevent the occurrence of defective patterns 160 upon etching, due tothe generation of pin holes or the like in the resist ink or the peelingof the resist ink. That is, the present invention adds a coupling agentto the resist ink and crosslinks the resist ink, resulting in preventionof the damage on the resist patterns due to the action of the etchingsolution.

The coupling agent is a material which acts between incompatiblematerials to form a crosslink between the two materials so as to improvean adhesive property or binding affinity therebetween. The presentinvention may add the coupling agent to the resist ink so as to preventpart of components of the resist ink from remaining without beingcrosslinked.

Especially, the present invention employs silane coupling agent, a metalcoupling agent such as titanate, organic chrome complex and aluminate,phosphate coupling agent, and the like, more particularly, mostlyemploys the silane coupling agent. Here, a main material of the resistink is methanol. The silane coupling agent exhibits the greatestreactivity with the methanol, accordingly the silane coupling agent isemployed in the present invention. Also, upon the use of the silanecoupling agent, the acid-resistance of the resist ink is enhanced.Hence, the silane coupling agent is usually employed. However, thecoupling agent employed in the present invention is not limited to thesilane coupling agent. Depending on a material of the resist ink or thelike, any other coupling agent as well as the metal coupling agent orthe phosphate coupling agent may be utilized.

Therefore, the following description will be given by exemplarilyemploying the silane coupling agent, which is however exemplary forclarity without the limitation of the present invention.

The addition of the coupling agent into the resist ink improves theadhesive (coupling) force between a surface of a metal layer, such asAl, AlNd or Mo and a surface of an organic insulating layer composed ofthe resist ink. The present invention uses a low molecular materialhaving a boiling point of more than 200° C. as the silane couplingagent. Here, the type of a coupling agent added may depend on a type ofsolvent contained in the resist ink.

For the use of alcohol solvent, a silane coupling agent, such asmethacryloxy propyltrimethoxy silane, γ-mercapto-propyltriethoxy silaneor N-(2-aminoethyl)-3-aminopropyltrimethoxy silane, is used. For the useof thermosetting solvent, a silane coupling agent, such asN-(2-aminoethyl)-3-aminopropyltrimethoxy silane, is used.

Furthermore, for the use of an alkyl solvent as a thermoplastic solvent,a silane coupling agent, such asN-(2-aminoethyl)-3-aminopropyltrimethoxy silane, is used. For the use ofphenyl solvent, a silane coupling agent, such asN-[2-vinylbenzylaminoyethyl]-3-aminopropyltrimethoxy silane, is used.For the use of an unsaturated solvent, a silane coupling agent, such as3-methacryloxy propyltrimethoxy silane, is used. For the use of an aminesensitive solvent, a silane coupling agent, such as 3-glycidoxypropyltrimethoxy silane, is used.

When such silane coupling agent is coupled to the resist ink, the resistink is crosslinked and also the coupling force between the resist inkand a substrate or metal layer is enhanced. The thusly enhanced couplingforce will be described in conjunction with FIG. 4. Here, various typesof coupling agents may be employed as the coupling agent; hereinafter,the silane coupling agent will be exemplarily illustrated. Other typesof coupling agents can also enhance the coupling force of the resist inkby a similar reaction to the silane coupling agent.

Referring to FIG. 4, if water is applied to a silane coupling agenthaving one side terminal with an organic functional group R and anotherside terminal with methoxy group (ethoxy is also possible), the silanecoupling agent is hydrolyzed to become RSi(OH)₃ and methanol (3CH₃OH).The hydrolyzed RSI(OH)₃ is subjected to a condensation reaction so thatwater is given off, resulting in coupling between oxygen molecule and Simolecules (Si—O—Si). Here, the OH-group is coupled to the Si moleculesand the OH-group is then subjected to a hydrogen bonding to OH-group ofa substrate.

Referring back to FIG. 3C, the resist ink patterns 138 transcribed ontothe etching target layer 160 a are baked at a temperature of about 150°C. for about 3 minutes. The baking process heats up the hydrogen-bondedmolecules, so that water is given off from the hydrogen-bondedmolecules. Accordingly, Si is coupled to O of the substrate or metallayer, and accordingly the organic functional group R is coupled to thesubstrate or metal layer. In other words, the silane coupling agentallows the organic functional group to be coupled by the silanecrosslink (Si—O—Si) and also to be firmly coupled to the surface of thesubstrate or metal layer.

As mentioned above, the present invention forms the crosslink in theresist ink by adding the coupling agent to the resist ink. The detailedcomponents of the resist ink will be described hereinafter.

The resist ink according to the present invention is composed by mixingin a solvent a base polymer such as resin, a tackifier for improving aprinting property of the resist ink, an additive such as surfactant ordye, a coupling agent such as silane coupling agent and the like.

Here, the solvent may be one of an alcohol solvent having a low boilingpoint of less than 80° C., such as ethanol or methanol, or an alkylsolvent, a phenyl solvent, an unsaturated solvent, an amine sensitivesolvent or the like.

Here, the alcohol solvent, the alkyl solvent, the phenyl solvent, theunsaturated solvent, the amine sensitive solvent or the like may be usedas a carrier solvent of the resist ink, and ethoxypropanol may be usedas a printing solvent of the resist ink.

Thus, two types of solvents, namely, the carrier solvent and theprinting solvent are used as a solvent in the following aspects. Asshown in FIGS. 3B and 3C, after the resist ink 133′ is partiallytranscribed from the roll 131 to the cliché 130, the remnant resist inkpatterns 133 a are transcribed onto the etching target layer 160 a ofthe substrate 150. Hence, for each transcription of the resist ink 133onto the cliché 130 and onto the etching target layer 160 a, appropriatesolvents should be selected for a smooth transcription. The presentinvention uses a solvent prepared by mixing ethanol or methanol as asolvent having a low boiling point and ethoxypropanol as a solventhaving a high boiling point in the ratio of approximately 9:1, allowingthe resist ink 133 to be smoothly transcribed onto the cliché 130 andonto the etching target layer 160 a.

The present invention may produce the resist ink by mixing 70% by weightof the solvent in which the carrier solvent and the printing solvent aremixed in the ratio of 9:1, 10-15% by weight of base polymer such asresin, 10-15% by weight of tackifier, 3% or less by weight of additiveand 1-10% by weight of silane coupling agent.

Here, the carrier solvent may be one selected from alcohol such asethanol or methanol, a silane solvent, a phenyl solvent, an unsaturatedsolvent and an amine sensitive solvent.

Also, the silane coupling agent may be one selected for use frommethacryloxy propyltrimethoxy silane, γ-mercapto-propyltriethoxy silane,N-(2-aminoethyl)-3-aminopropyltrimethoxy silane,N-[2(vinylbenzylamino)-ethyl]-3-aminopropyltrimethoxy silane,3-methacryloxy propyltrimethoxy silane and 3-glycidoxy propyltrimethoxysilane.

Especially, methacryloxy propyltrimethoxy silane orN-(2-aminoethyl)-3-aminopropyltrimethoxy silane may be used upon usingthe ethanol solvent for the resist ink, and γ-mercapto-propyltriethoxysilane may be used upon using the methanol solvent for the resist ink.Also, N-(2-aminoethyl)-3-aminopropyltrimethoxy silane may be used uponusing a thermosetting solvent for the resist ink.

In addition, N-(2-aminoethyl)-3-aminopropyltrimethoxy silane may be usedupon using the alkyl solvent as the thermoplastic solvent, andN-[2(vinylbenzylamino)-ethyl]-3-aminopropyltrimethoxy silane may be usedupon using the phenyl solvent. 3-methacryloxy propyltrimethoxy silanemay be used upon using the unsaturated solvent, and 3-glycidoxypropyltrimethoxy silane may be used upon using the amine sensitivesolvent.

Thus, the present invention adds a coupling agent such as the silanecoupling agent so as to crosslink the resist ink, thereby enhancing thecoupling between the resist ink and the etching target layer, whichresults in preventing a defect occurrence, due to a liquation ofnon-crosslinked components of the resist ink upon wet etching, andachieving a strong acid-resistance.

The thusly fabricated resist patterns according to the present inventionmay not be limitedly applied only to the printing method shown in FIGS.3A to 3E.

For instance, another method may also be applicable, in which under astate where a transcription roll having grooves each filled with aresist ink is prepared and the transcription roll comes in contact witha printing roll, the transcription roll and the printing roll arerotated (rolled) so as to transcribe the resist ink onto the printingroll, and then the printing roll is rotated in a contact state with anetching target layer on a substrate to re-transcribe the resist ink ontothe etching target layer, thereby forming resister patterns.

Another method may alternatively be applicable, in which after a clichéhaving grooves is prepared and a resist ink is filled in each groove, aroll is rotated in a contact state with the cliché so as to transcribethe resist ink filled in each groove onto the surface of the roll andthen the roll is rotated in a contact state with a surface of asubstrate to re-transcribe the resist ink transcribed on the surface ofthe roll onto a surface of an etching target layer, thereby formingresist patterns.

Consequently, the resist ink fabricated according to the presentinvention may not be limited to a specific method but applicable to anyfabrication method as long as it can form color filters by transcribingthe resist ink by use of a roll or a cliché.

Hereinafter, description will be given of a method for fabricating aliquid crystal display (LCD) device by employing the above resist inkand printing method.

FIGS. 5A to 5H are views showing a method for fabricating an LCD devicein accordance with the present invention.

First, referring to FIG. 5A, a first metal layer 211 a as a single layeror a dual layer, formed of Al, Mo, Cr, Cu, Al alloy, Mo alloy, Cr alloyand Cu alloy, is formed, by sputtering, on a first substrate 210 made ofa transparent material like glass.

A resist ink is prepared by mixing a solvent composed of ethanol ormethanol and ethoxypropanol, a base polymer such as resin, a tackifier,an additive and a silane coupling agent, so as to be coated on the roll131 as shown in FIGS. 3A and 3B. The coated resist ink is partiallyremoved by a cliché, thereby forming a resist pattern. Afterwards, theroll 131 is rotated in a contact state with the first metal layer 211 aso that the resist pattern is transcribed onto the first metal layer 211a, thereby forming a first resist pattern 238 a on the first metal layer211 a.

Referring to FIG. 5B, an etching solution is applied in a state ofpartially blocking the first metal layer 211 a by use of the firstresist pattern 238 a to etch the first metal layer 211 a, therebyforming a gate electrode 211 on the substrate 210. Chemical vapordeposition (CVD) is then followed to form a gate insulating layer 212made of an inorganic material, such as SiO₂ or SiN₂.

Afterwards, as shown in FIG. 5C, the first substrate 210 having the gateelectrode 211 formed thereon is entirely deposited with an amorphoussilicon or the like by the plasma enhanced chemical vapor deposition(PECVD), which is followed by etching, thereby forming a semiconductorlayer 213. A second metal layer 214 as a single layer or a dual layer,formed of Al, Mo, Cr, Cu, Al alloy, Mo alloy, Cr alloy and Cu alloy, isformed on the entire first substrate 210, on which the semiconductorlayer 213 is formed. The resist ink, fabricated in accordance with thepresent invention by the printing method shown in FIGS. 3A to 3C, istranscribed on the second metal layer 214, to thereby form second resistpatterns 238b on the second metal layer 214.

Here, although not shown, the semiconductor layer 213 may also be etchedby use of the resist ink according to the present invention. That is,after forming a resist pattern on a semiconductor layer by the printingmethod shown in FIGS. 3A to 3C, the semiconductor layer is etched by useof an etching gas, to thereby form the semiconductor layer 213.

Referring to FIG. 5D, the second metal layer 214 is then etched with anetching solution by use of the second resist patterns 238 b, to form asource electrode 214 a and a drain electrode 214 b on the semiconductorlayer 214. Afterwards, a passivation layer 215 defined as an inorganicinsulating layer or organic insulating layer is formed all over thefirst substrate 210. The passivation layer 215 is then etched to form acontact hole 217 so that the drain electrode 214 b is exposed. Atransparent conductive material such as indium tin oxide (ITO) or indiumzinc oxide (IZO) is stacked on the passivation layer 215 and the contacthole 217 by sputtering, thereby forming a third metal layer 216 a. Here,although not shown, the contact hole 217 may also be formed by use ofthe resist ink according to the present invention. That is, afterforming a resist pattern on the passivation layer 215 by employing theprinting method shown in FIGS. 3A to 3C, the passivation layer 215 isetched with an etching gas, so as to form the contact hole 217.

Then, the resist ink fabricated according to the present invention istranscribed on the third metal layer 216 a by employing the printingmethod shown in FIGS. 3A to 3C, thereby forming a third resist pattern238 c on the third metal layer 216 a.

Referring to FIG. 5E, the third metal layer 216 a is etched with anetching solution by use of the third resist pattern 238 c, so as to forma pixel electrode 216, electrically connected to the drain electrode 214b, on the passivation layer 215.

Referring to FIG. 5F, on a second substrate 220 made of a transparentmaterial like glass is formed an opaque fourth metal layer 222 a definedas a single layer of Cr or a dual layer of Cr/CrO2 by the sputtering.The resist ink fabricated according to the present invention is thentranscribed on the fourth metal layer 222 a by employing the printingmethod, thereby forming a fourth resist pattern 238 d on the fourthmetal layer 222.

Referring to FIG. 5G, the fourth metal layer 222 a is etched by use ofthe fourth resist pattern 238 d, to form a black matrix 222. Althoughnot shown, the black matrix 222 may usually be formed on an imagenon-display portion, such as a portion on which a thin film transistoris formed or a portion on which various electrodes are formed.Afterwards, a color filter layer 224 is formed on the second substrate220, and a common electrode 226 formed of ITO or IZO is formed on thecolor filter layer 224.

Afterwards, as shown in FIG. 5H, after attaching the first substrate 210and the second substrate 220, a liquid crystal layer 290 is formedbetween the first and second substrates 210 and 220, thereby fabricatingan LCD device. Typically, the liquid crystal layer 290 is formed byinjecting liquid crystal between the first and second substrates 210 and220 after attaching the two substrates 210 and 220. Alternatively, aliquid crystal layer may be formed in a manner that liquid crystal maybe dispensed on the first substrate 210 having a thin film transistor orthe second substrate 220 having the color filter layer 224 and apressure is applied to both the first and second substrates 210 and 220so that the dispensed liquid crystal can be uniformly distributed allover the substrates 210 and 220.

As described above, the present invention fabricates a new resist inkand uses the same to etch metallic layers such as various electrodes orblack matrix of an LCD device; however, the present invention may not belimitedly applied to fabricate the LCD devices. For instance, the resistink according to the present invention may be useable for etching metallayers of a semiconductor or the like.

The foregoing embodiments and advantages are merely exemplary and arenot to be construed as limiting the present disclosure. The presentteachings can be readily applied to other types of apparatuses. Thisdescription is intended to be illustrative, and not to limit the scopeof the claims. Many alternatives, modifications, and variations will beapparent to those skilled in the art. The features, structures, methods,and other characteristics of the exemplary embodiments described hereinmay be combined in various ways to obtain additional and/or alternativeexemplary embodiments.

As the present features may be embodied in several forms withoutdeparting from the characteristics thereof, it should also be understoodthat the above-described embodiments are not limited by any of thedetails of the foregoing description, unless otherwise specified, butrather should be construed broadly within its scope as defined in theappended claims, and therefore all changes and modifications that fallwithin the metes and bounds of the claims, or equivalents of such metesand bounds are therefore intended to be embraced by the appended claims.

1. A method for forming a pattern comprising: providing a substratehaving an etching target layer thereon; preparing a resist ink composedof 70% or less by weight of solvent, 10-15% by weight of base polymer,10-15% by weight of tacktifier, 3% or less by weight of additive, and1-10% by weight of silane coupling agent; forming the resist ink onto aroll; rotating the roll having the resist ink in a contact state with acliché having convex patterns and removing the resist ink contacted withthe convex patterns from the roll to form resist patterns on the rollsurface; rotating the roll on the substrate to transcribe the resistpatterns onto the etching target layer; baking the transcribed resistpatterns; and etching the etching target layer by using the resistpatterns, wherein the solvent includes carrier solvent and printingsolvent mixed in the ratio of 9:1.
 2. The method of claim 1, wherein theetching target layer comprises at least one of a metal layer, asemiconductor layer and an insulating layer.
 3. The method of claim 1,wherein the silane coupling agent is one selected from a groupconsisting of methacryloxy propyltrimethoxy silane,N-(2-aminoethyl)-3-aminopropyltrimethoxy silane,y-mercapto-propyltriethoxy silane,N-[2-vinylbenzylamino)-ethyl]-3-aminopropyltrimethoxy silane,3-methacryloxy propyltrimethoxy silane and 3-glycidoxy propyltrimethoxysilane.